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?2015 ds-70005001d 01/15 data sheet www.microchip.com features ? high gain: ? typically 29 db gain across 2.4?2.5 ghz over tempera- ture 0c to +85c for transmitter (tx) chain. ? high linear output power: ? >24 dbm p1db - single-tone measurement - please refer to ?absolute maximum stress ratings? on page 6 ? meets 802.11g ofdm acpr re quirement up to 21 dbm ? ~3% evm up to 18 dbm for 54 mbps 802.11g signal ? meets 802.11b acpr requirement up to 21 dbm ? 2.5% evm up to 17 dbm for 11n, mcs7-ht40 ? 1.8% evm up to 16 dbm for 256 qam mcs9-ht40 ? high power-added efficiency/low operating cur- rent for 802.11b/g/n applications ? ~27%/160 ma @ p out = 21 dbm for 802.11g ? ~26%/165 ma @ p out = 21 dbm for 802.11b ?low i ref power-up/down control ?i ref <2 ma ? low idle current ?~65 ma i cq for 11g operation ?~80 ma i cq for 11n and 256 qam operation ? high-speed power-up/down ? turn on/off time (10%- 90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? low shut-down current (~2 a) ? limited variation over temperature ? ~1 db gain/power variation between 0c to +85c ? excellent on-chip power detection ? >15 db dynamic range on-chip power detection ? input/output ports matched to 50 ? internally and dc decoupled. ? packages available ? 16-contact xqfn ? 3mm x 3mm ? all non-pb (lead-free) devices are rohs compliant applications ? wlan (ieee 802.11b/g/n) ? cordless phones ? 2.4 ghz ism wireless equipment 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 sst12lf02 is a 2.4 ghz front-end module (fem) that combines a high-perfor- mance power amplifier (pa) and a single-pole, three-throw, antenna switch for tx/ rx and bluetooth ? control. designed in compliance with ieee 802.11 b/g/n/256 qam applications and based on gaas phemt/hbt technology, the sst12lf02 operates within the frequency range of 2.4- 2.5 ghz at a very low dc-current con- sumption. the transmitter chain has excellen t linearity, typically 3% evm up to 18 dbm output power, for 54 mbps 802.1 1g operation while meeting 802.11g spec- trum mask at 21 dbm. th e transmitter will also provid e 17 dbm with 11n, mcs7- ht40 modulation and 16 dbm with 256 qam mcs9-ht40 modulation. sst12lf02 is offered in a 16-contact xqfn package.
?2015 ds-70005001d 01/15 2 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet product description sst12lf02 is a 2.4 ghz front-en d module (fem) designed in co mpliance with i eee 802.11b/g/n applications. it combines a high-performance power amplifier (pa) and a switch. there are three com- ponents to the fem: the receiver (rx) chain, the transmitter (tx) chain, and the bluetooth? (bt) chain. the tx chain includes a high-efficiency pa based on the ingap/gaas hbt technology. this chain typ- ically provides 29 db gain with 27% power-added efficiency (pae) @ pout = 21 dbm for 802.11g and 26% pae @ pout = 21 dbm for 802.11b the tx chain has excellent linearity, typically ~3% added evm at 18 dbm output power which is essen- tial for 54 mbps 802.11g operation while meeting 802.11g spectrum mask at 21dbm. the sst12lf02 transmitter will also provide up to 17 dbm for 11n, mcs7-ht40 modulation and up to 16 dbm for 256 qam, mcs9-ht40 modulation. sst12lf02 also features easy board-level usage along with high-speed power-up/down controls. ultra-low reference current (total i ref ~2 ma) makes sst12lf02 controllable by an on/off switching signal directly from the baseband chip. these features, coupled with low operating current, make the sst12lf02 ideal for the final stage power amplification in battery-powered 802.11b/g/n wlan trans- mitter applications. sst12lf02 has an excellent on-chip, single-ended power detector, which features wide-range (>15 db) with db-wise linearization. the excellent on-chip power detector provides a reliable solution to board-level power control. the input/output rf ports are single-ended and fully matched to 50 ? ? internally. these rf ports are dc decoupled, and require no dc-blocking capacito rs or matching components. this helps reduce the system board bill of materials (bom) cost. the sst12lf02 is offered in a16-contact xqfn package. see figure 2 for pin assignments and table 1 for pin descriptions.
?2015 ds-70005001d 01/15 3 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet functional blocks figure 1: functional block diagram 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 141 8 p1.0 g n d a n t g n d v cc2 rx g n d tx v reg rx_c tx_c bt_c bt p_det v cc1 n c n c
?2015 ds-70005001d 01/15 4 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet pin assignments figure 2: pin assignments for 16-contact xqfn 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 to p v ie w (contacts facing do w n) rf and dc g n d 141 8 p1.0 g n d a n t g n d v cc2 rx g n d tx v reg rx_c tx_c bt_c bt p_det v cc1 n c n c
?2015 ds-70005001d 01/15 5 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground low inductance ground pad rx 1 0 rf output for receive path, dc decoupled. gnd 2 ground ground pad tx 3 i rf input for transmit path, dc decoupled vreg 4 pwr 1 st and 2 nd stage idle current control p_det 5 o on-chip power detector vcc1 6 power sup- ply pwr power supply, 1 st stage nc 7 no connec- tion unconnected pin nc 8 no connec- tion unconnected pin vcc2 9 power sup- ply pwr power supply, 2 nd stage gnd 10 ground ground pad ant 11 i/o rf input for receive path, a nd rf output for transmit path, dc decoupled gnd 12 ground ground pad bt 13 i/o rf output for receive path, and rf input for transmit path, dc decoupled. used for bluetooth? bt_c 14 pwr switch control pin for bt (bidirectional) path. tx_c 15 pwr switch control pin for tx path rx_c 16 pwr switch control pin for rx path t1.0 75001
?2015 ds-70005001d 01/15 6 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet electrical specifications the dc and rf specifications for the power amplifier ar e specified below. refer to table 3 for the dc voltage and current specifications. refer to figures 3 through 11 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) input power to pin 3 (p in ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dbm average output power from pin 11 (p out ) 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dbm 1. never measure with cw source. puls ed single-tone source with <50% duty cycle is recommended. exceeding the max- imum rating of average output power could cause permanent damage to the device. supply voltage at pins 6 and 9 (v cc ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +4.0v reference voltage to pin 4 (v ref ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +3.3v dc supply current (i cc ) 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 ma 2. measured with 100% duty cycle 54 mbps 802.11g ofdm signal operating temperature (t a ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150oc surface mount solder reflow temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260c for 10 seconds table 2: operating range range ambient temp v cc extended -20c to +85c 3.3v table 3: dc electrical characteristics at 25c for tx chain, 11g operation symbol parameter min. typ max. unit v cc supply voltage at pins 6 and 9 3.0 3.3 3.6 v i cq idle current. no rf input, pa biased for 18 dbm at 3% evm 65 ma v reg reference voltage 2.75 2.80 2.95 v i cc supply current for 11g ofdm 54 mbps signal, p out = 21 dbm 160 ma for 11b dsss 1 mbps signal, p out = 21 dbm 165 ma t3.1 75001 table 4: dc electrical characteristics at 25c for tx chain, 11n and 256 qam operation symbol parameter min. typ max. unit i cq idle current. no rf input, pa biased for 18 dbm at 3% evm 80 ma v reg reference voltage 2.90 2.95 3.00 v i cc supply current for 11n, mcs7, p out = 17 dbm 120 ma for 256 qam, mcs9 p out = 16 dbm 110 ma t4.1 75001
?2015 ds-70005001d 01/15 7 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet table 5: rf characteristics at 25c for tx chain, v cc =3.3v, v reg =2.80v symbol parameter min. typ m ax. unit test condition f l-u frequency range 2412 2484 mhz g small signal gain 28 29 db tx and pa on g var1 gain variation over band (2412?2484 mhz) 0.5 db tx and pa on g var2 gain ripple over channel (20 mhz) 0.2 db tx and pa on p out output power meets 11g ofdm 6 mbps spectrum mask 20 21 dbm tx and pa on output power meets 11b dsss 1 mbps spectrum mask 20 21 dbm tx and pa on evm @ 18 dbm output power with 11g ofdm 54 mbps signal 3 % tx and pa on @ 17 dbm output power, mcs7-ht40 2.5 % tx and pa on v reg =2.95v @ 16 dbm output power, mcs9-ht40 1.8 % tx and pa on v reg =2.95v 2f, 3f, 4f, 5f harmonics at 22 dbm, without external filters -35 dbc tx and pa on iso1 isolation (tx to rx) -12 db tx and pa on iso2 isolation (tx to bt) -10 db tx and pa on iso3 isolation (rx to tx) -30 db tx and pa on iso4 isolation (bt to tx) -50 db tx and pa on t5.0 75001 table 6: rf characteristics at 25c for rx chain symbol parameter min. typ max. unit test condition f l-u frequency range 2412 2484 mhz il insertion loss (ant to rx) 1 1. the evaluation board?s loss is de- embedded and excluded from this number. 0.5 0.8 db rx on insertion loss with bt enabled 4.5 db rx and bt on rl return loss -10 db rx on iso1 isolation (rx to bt) & (bt to rx) -20 db rx on iso2 isolation (rx to tx) & (tx to rx) -30 db rx on t6.0 75001 table 7: rf characteristics at 25c for bt chain symbol parameter min. typ max. unit test condition f l-u frequency range 2412 2484 mhz il insertion loss (ant to bt) 1 1. the evaluation board?s loss is de- embedded and excluded from this number. 0.5 0.8 db bt on insertion loss with rx enabled 3.8 db bt and rx on rl return loss -10 db bt on iso1 isolation (bt to rx) & (rx to bt) -18 db bt on iso2 isolation (bt to tx) & (tx to bt) -48 db bt on t7.0 75001
?2015 ds-70005001d 01/15 8 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet table 8: switch control logic 1 rx_c tx_c bt_c mode h l h rx and bt hllrx lhltx llhbt t8.0 75001 1. for rx_c, tx_c, and bt_c, h = 3.3v and l = 0v.
?2015 ds-70005001d 01/15 9 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, unless otherwise specified figure 3: s-parameters for tx chain s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 frequency (ghz) s11 (db) frequency (ghz) s21 (db) s22 (db) frequency (ghz) s12 (db) frequency (ghz) 1418 s-parms.1.1 s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 s21 versus frequency -40 -30 -20 -10 0 10 20 30 40 s22 versus frequency -30 -25 -20 -15 -10 -5 0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
?2015 ds-70005001d 01/15 10 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, 54 mbps 802.11g ofdm signal figure 4: evm versus output power measured with equalizer training using sequence only figure 5: dynamic evm vs output power for mcs7-ht40 modulation 141 8 f4.1 0 1 2 3 4 5 6 7 8 9 1011121314151617181920212223 evm (%) output power (dbm) evm versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 141 8 f4.1 0 1 2 3 4 5 6 7 8 9 10 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 evm (%) output power (dbm) dynamic evm versus output power 11n, 40mhz bw, mcs7, 135mbps 2412 2442 2472
?2015 ds-70005001d 01/15 11 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet figure 6: dynamic evm vs output power for mcs9-ht40 modulation figure 7: power gain versus output power 141 8 f13.0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 1011121314151617181920 evm (%) output power (dbm) dynamic evm versus output power 11ac, 40mhz bw, mcs9, 180mbps 2412 2442 2472 141 8 f5.1 power gain versus output power 20 22 24 26 2 8 30 32 34 36 3 8 40 9 10111213141516171 8 19 20 21 22 23 output power (dbm) power gain (db) fre q =2.412 ghz fre q =2.442 ghz fre q =2.472 ghz
?2015 ds-70005001d 01/15 12 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet figure 8: total current consumption for 802.11g operation versus output power figure 9: total current consumption for 11n and 256 qam operations 141 8 f6.1 supply current versus output power 9 10111213141516171 8 19 20 21 22 23 output power (dbm) supply current (ma) fre q =2.412 ghz fre q =2.442 ghz fre q =2.472 ghz 50 60 70 8 0 90 100 110 120 130 140 150 160 170 1 8 0 190 200 141 8 f12.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 supply cu rrent (ma) output power (dbm) instantaneous current versus output power 11n, 40mhz bw, mcs7, 135mbps 2412 2442 2472
?2015 ds-70005001d 01/15 13 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet figure 10: pae versus output power figure 11: detector characteristics versus output power 141 8 f7.1 pae versus output power 9 10111213141516171 8 19 20 21 22 23 output power (dbm) pae (%) fre q =2.412 ghz fre q =2.442 ghz fre q =2.472 ghz 0 2 4 6 8 10 12 14 16 1 8 20 22 24 26 2 8 30 32 34 141 8 f 8 .1 detector volta g e versus output power 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0. 8 0 0. 8 5 0.90 0.95 1.00 1.05 1.10 1.15 1.20 output power (dbm) detector volta g e (v) fre q =2.412 ghz fre q =2.442 ghz fre q =2.472 ghz 01234567 8 9 10111213141516171 8 19 20 21 22 23 24
?2015 ds-70005001d 01/15 14 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet figure 12: typical schematic for high-efficiency 802.11b/g/n applications 141 8 schematic 1.0 v cc test conditions: v cc = 3.3 v v reg = 2. 8 0 v (11g) v reg = 2.95 v (11n, 256 qam) 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 12lf02 50 rx 50 tx v reg 50 a n t 3.6 nh 4.7 f v det rx_c tx_c bt_c 50 bt bt
?2015 ds-70005001d 01/15 15 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet product ordering information valid combinations for sst12lf02 SST12LF02-QXCE sst12lf02 evaluation kits SST12LF02-QXCE-k note: valid combinations are those products in mass production or will be in mass production. consult your micro- chip sales representative to confirm availability of va lid combinations and to determine availability of new combinations. sst 12 lf 02 - qxce xx xx xx - xxxx environmental attribute e 1 = non-pb contact (lead) finish package modifier c = 16 contact package type qx = xqfn product family identifier product type f = front-end module voltage l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = rf products 1. environmental suffix ?e? denotes non-pb solder. non-pb solder devices are ?rohs compliant?.
?2015 ds-70005001d 01/15 16 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet packaging diagrams for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: microchip technology drawing c04-14018a sheet 1 of 1 16-lead extremely thin quad flatpack no-leads (qxce/f) - 3x3 mm body [xqfn] 16-xqfn-3x3-qxc-1.0 note: 1. complies with jedec jep95 mo-248, variant xeed-4 except external paddle nominal dimensions. 2. from the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and to vss. this paddle must be soldered to the pc board; it is requiresd to connect this paddle to the vss of the unit. connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min).
?2015 ds-70005001d 01/15 17 2.4 ghz wlan high-gain, high-efficiency fem sst12lf02 data sheet table 9: revision history revision description date 00 ? initial release of data sheet feb 2010 01 ? updated sst address. ? revised wlan information to include 802.11b/g/n. ? minor update to table 4. july 2010 02 ? updated ?features? on page 1 and table 5 on page 7 ? applied new document format jan 2011 a ? updated ?features? on page 1 ? removed a column from table 3 on page 6 ? updated figure 8 on page 12 ? released document under the letter revision system ? updated document from spec s71418 to ds-75001 mar 2011 b ? this revision was never released c ? updated ?features? on page 1 ? corrected voltage names from vrx, vtx, and vbt to rx_c, tx_c, bt_c ? updated figure 4 and table 5 mar 2014 d ? updated ?features? on page 1 ? added figures 5, 4, and 9 ? added table 4 on page 6 and revised table 5 on page 7 ? edited figure 12 on page 14 jan 2015 ? 2015 microchip technology inc. sst, silicon storage technology, the sst logo, superflash, and mtp are registered trademarks of microchip technology, inc. mpf, sqi, serial quad i/o, and z-scale are trademarks of microc hip technology, inc. all other trademarks and registered trade- marks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for th e most recent documentation. for the most current package drawings, please see the packaging specific ation located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity ; actual usable capacity may be less. microchip makes no warranty for the use of its products other than those expressly contained in the standard terms and conditio ns of sale. for sales office locations and information, please see www.microchip.com. www.microchip.com isbn:978-1-63276-995-4

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